IRL8114PBF MOSFET Transistor

The IRL8114PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL8114PBF transistor as follows.

IRL8114PBF Transistor Specification

Transistor Code		IRL8114PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		103nS
Gate-Threshold Voltage (Maximum)		2.25V

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