IRL5602SPBF MOSFET Transistor

The IRL5602SPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL5602SPBF transistor as follows.

IRL5602SPBF Transistor Specification

Transistor Code		IRL5602SPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		1V

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