IRHY57230CMSE MOSFET Transistor

The IRHY57230CMSE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHY57230CMSE transistor as follows.

IRHY57230CMSE Transistor Specification

Transistor Code		IRHY57230CMSE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		184pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4.5V

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