IRFV360 MOSFET Transistor

The IRFV360 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFV360 transistor as follows.

IRFV360 Transistor Specification

Transistor Code		IRFV360
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO258AA
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V

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