IRFS820A MOSFET Transistor

The IRFS820A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS820A transistor as follows.

IRFS820A Transistor Specification

Transistor Code		IRFS820A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C

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