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IRFS151 MOSFET Transistor

The IRFS151 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS151 transistor as follows.

Circuit diagram symbol of the IRFS151 transistor

IRFS151 Transistor Specification

Transistor Code IRFS151
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 80V
Drain Current (Maximum) ID 27.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 70W
Operating Junction Temperature (Maximum) 150°C

IRFS151 MOSFET Transistor Overview

The IRFS151 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO3P package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the IRFS151 MOSFET

Followings are the key electrical characteristics of the IRFS151 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRFS151 MOSFET transistor is 80V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRFS151 MOSFET transistor is 27.5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRFS151 MOSFET transistor when the transistor is fully turned on is 0.055 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRFS151 MOSFET transistor can comfortably transfer into heat without breaking is 70W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRFS151 MOSFET transistor is switched on is . This is the rate at which IRFS151 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IRFS151 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IRFS151 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IRFS151 MOSFET transistor. You can download the official IRFS151 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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