IRFR5410PBF MOSFET Transistor

The IRFR5410PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR5410PBF transistor as follows.

IRFR5410PBF Transistor Specification

Transistor Code		IRFR5410PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.205Ohm
Power Dissipation (Maximum)	PD	66W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		58nC

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