IRFP4768 MOSFET Transistor

The IRFP4768 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP4768 transistor as follows.

IRFP4768 Transistor Specification

Transistor Code		IRFP4768
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	93A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0175Ohm
Power Dissipation (Maximum)	PD	520W
Total Gate Charge		180nC

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