IRFP360 MOSFET Transistor

The IRFP360 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP360 transistor as follows.

IRFP360 Transistor Specification

Transistor Code		IRFP360
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	280W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		210nC

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