IRFP254N MOSFET Transistor

The IRFP254N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP254N transistor as follows.

IRFP254N Transistor Specification

Transistor Code		IRFP254N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	220W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		4V

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