IRFM110A MOSFET Transistor

The IRFM110A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM110A transistor as follows.

IRFM110A Transistor Specification

Transistor Code		IRFM110A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C

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