IRFHM830 MOSFET Transistor

The IRFHM830 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM830 transistor as follows.

IRFHM830 Transistor Specification

Transistor Code		IRFHM830
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	2.7W
Operating Junction Temperature (Maximum)		150°C

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