IRFH5210PBF MOSFET Transistor

The IRFH5210PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5210PBF transistor as follows.

IRFH5210PBF Transistor Specification

Transistor Code		IRFH5210PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0149Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.7nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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