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IRFBA22N50A MOSFET Transistor

The IRFBA22N50A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFBA22N50A transistor as follows.

Circuit diagram symbol of the IRFBA22N50A transistor

IRFBA22N50A Transistor Specification

Transistor Code IRFBA22N50A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SUPER220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.26Ohm
Power Dissipation (Maximum) PD 357W
Operating Junction Temperature (Maximum) 150°C

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