IRFB3206GPBF MOSFET Transistor

The IRFB3206GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB3206GPBF transistor as follows.

IRFB3206GPBF Transistor Specification

Transistor Code		IRFB3206GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		120nC

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