IRFB23N20DPBF MOSFET Transistor

The IRFB23N20DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB23N20DPBF transistor as follows.

IRFB23N20DPBF Transistor Specification

Transistor Code		IRFB23N20DPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	170W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		57nC

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