IRF9Z34N MOSFET Transistor

The IRF9Z34N is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9Z34N transistor as follows.

IRF9Z34N Transistor Specification

Transistor Code		IRF9Z34N
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	56W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		23.3nC

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