IRF9389 MOSFET Transistor

The IRF9389 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9389 transistor as follows.

IRF9389 Transistor Specification

Transistor Code		IRF9389
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		82pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.8nS
Gate-Threshold Voltage (Maximum)		2.3V
Total Gate Charge		6.8nC

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