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IRF7815PBF MOSFET Transistor

The IRF7815PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7815PBF transistor as follows.

Circuit diagram symbol of the IRF7815PBF transistor

IRF7815PBF Transistor Specification

Transistor Code IRF7815PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.043Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 129pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.2nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 25nC

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