IRF7471PBF MOSFET Transistor

The IRF7471PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7471PBF transistor as follows.

IRF7471PBF Transistor Specification

Transistor Code		IRF7471PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.7nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		21nC

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