IRF7467PBF MOSFET Transistor

The IRF7467PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7467PBF transistor as follows.

IRF7467PBF Transistor Specification

Transistor Code		IRF7467PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		706pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.5nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		21nC

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