IRF5803D2PBF MOSFET Transistor

The IRF5803D2PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF5803D2PBF transistor as follows.

IRF5803D2PBF Transistor Specification

Transistor Code		IRF5803D2PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.112Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		93pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		550nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		25nC

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