IRF3315PBF MOSFET Transistor

The IRF3315PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3315PBF transistor as follows.

IRF3315PBF Transistor Specification

Transistor Code		IRF3315PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		95nC

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