IRF3315L MOSFET Transistor

The IRF3315L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3315L transistor as follows.

IRF3315L Transistor Specification

Transistor Code		IRF3315L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.082Ohm
Power Dissipation (Maximum)	PD	94W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		95nC

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