IRF1607PBF MOSFET Transistor

The IRF1607PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1607PBF transistor as follows.

IRF1607PBF Transistor Specification

Transistor Code		IRF1607PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	142A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	380W
Drain-Source Capacitance		1230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		320nC

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