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IRF1018EPBF MOSFET Transistor

The IRF1018EPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1018EPBF transistor as follows.

Circuit diagram symbol of the IRF1018EPBF transistor

IRF1018EPBF Transistor Specification

Transistor Code IRF1018EPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 79A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0084Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 270pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 46nC

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