IRF1010ESPBF MOSFET Transistor

The IRF1010ESPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1010ESPBF transistor as follows.

IRF1010ESPBF Transistor Specification

Transistor Code		IRF1010ESPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		78nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		130nC

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