IRF100B202 MOSFET Transistor

The IRF100B202 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF100B202 transistor as follows.

IRF100B202 Transistor Specification

Transistor Code		IRF100B202
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	97A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0086Ohm
Power Dissipation (Maximum)	PD	221W
Drain-Source Capacitance		319pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		77nC

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