The IPW60R190C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPW60R190C6 transistor as follows.
Transistor Code | IPW60R190C6 | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | TO247 | |
Drain-Source Voltage (Maximum) | VDS | 600V |
Drain Current (Maximum) | ID | 20.2A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.19Ohm |
Power Dissipation (Maximum) | PD | 151W |
Total Gate Charge | 58nC |
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