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IPT007N06N MOSFET Transistor

The IPT007N06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPT007N06N transistor as follows.

Circuit diagram symbol of the IPT007N06N transistor

IPT007N06N Transistor Specification

Transistor Code IPT007N06N
Transistor Type MOSFET
Control Channel Type N-Channel
Package HSOF-8-1
Transistor SMD Code 007N06N
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 300A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00075Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 3400pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 3.3V
Total Gate Charge 216nC

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