IPP410N30N MOSFET Transistor

The IPP410N30N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP410N30N transistor as follows.

IPP410N30N Transistor Specification

Transistor Code		IPP410N30N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		410N30N
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		374pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		4V

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