IPP076N12N3G MOSFET Transistor

The IPP076N12N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP076N12N3G transistor as follows.

IPP076N12N3G Transistor Specification

Transistor Code		IPP076N12N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	120V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0076Ohm
Power Dissipation (Maximum)	PD	188W
Total Gate Charge		76nC

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