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IPP055N03L MOSFET Transistor

The IPP055N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP055N03L transistor as follows.

Circuit diagram symbol of the IPP055N03L transistor

IPP055N03L Transistor Specification

Transistor Code IPP055N03L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 055N03L
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0055Ohm
Power Dissipation (Maximum) PD 68W
Drain-Source Capacitance 920pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 5.2nS
Gate-Threshold Voltage (Maximum) 2.2V

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