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IPL65R310E6 MOSFET Transistor

The IPL65R310E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPL65R310E6 transistor as follows.

Circuit diagram symbol of the IPL65R310E6 transistor

IPL65R310E6 Transistor Specification

Transistor Code IPL65R310E6
Transistor Type MOSFET
Control Channel Type N-Channel
Package THINPAK8X8
Transistor SMD Code 65E6310
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.31Ohm
Power Dissipation (Maximum) PD 104W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3.5V

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