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IPI65R190C6 MOSFET Transistor

The IPI65R190C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI65R190C6 transistor as follows.

Circuit diagram symbol of the IPI65R190C6 transistor

IPI65R190C6 Transistor Specification

Transistor Code IPI65R190C6
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Transistor SMD Code 65C6190
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 151W
Drain-Source Capacitance 98pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 3.5V

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