IPD800N06NG MOSFET Transistor

The IPD800N06NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD800N06NG transistor as follows.

IPD800N06NG Transistor Specification

Transistor Code		IPD800N06NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	47W

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