IPD70N10S3L-12 MOSFET Transistor

The IPD70N10S3L-12 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD70N10S3L-12 transistor as follows.

IPD70N10S3L-12 Transistor Specification

Transistor Code		IPD70N10S3L-12
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		77nC

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