IPB12CN10NG MOSFET Transistor

The IPB12CN10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB12CN10NG transistor as follows.

IPB12CN10NG Transistor Specification

Transistor Code		IPB12CN10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		12CN10N
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	67A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0124Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		489pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V

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