IPB107N20NA MOSFET Transistor

The IPB107N20NA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB107N20NA transistor as follows.

IPB107N20NA Transistor Specification

Transistor Code		IPB107N20NA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		107N20NA
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	88A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0107Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		401pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V

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