IPB055N03L MOSFET Transistor

The IPB055N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB055N03L transistor as follows.

IPB055N03L Transistor Specification

Transistor Code		IPB055N03L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		055N03L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		920pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5.2nS
Gate-Threshold Voltage (Maximum)		2.2V

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