HY110N06T MOSFET Transistor

The HY110N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY110N06T transistor as follows.

HY110N06T Transistor Specification

Transistor Code		HY110N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		110N06T
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		385pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12.6nS
Gate-Threshold Voltage (Maximum)		3V

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