HUFA75639S3ST MOSFET Transistor

The HUFA75639S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75639S3ST transistor as follows.

HUFA75639S3ST Transistor Specification

Transistor Code		HUFA75639S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		75639S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		110nC

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