HUF75333G3 MOSFET Transistor

The HUF75333G3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75333G3 transistor as follows.

HUF75333G3 Transistor Specification

Transistor Code		HUF75333G3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	111W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		70nC

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