HIRF830F MOSFET Transistor

The HIRF830F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HIRF830F transistor as follows.

HIRF830F Transistor Specification

Transistor Code		HIRF830F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FP
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS

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