HBS170 MOSFET Transistor

The HBS170 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HBS170 transistor as follows.

HBS170 Transistor Specification

Transistor Code		HBS170
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	0.83W
Drain-Source Capacitance		17pF
Operating Junction Temperature (Maximum)		150°C

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