HAF1002L MOSFET Transistor

The HAF1002L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF1002L transistor as follows.

HAF1002L Transistor Specification

Transistor Code		HAF1002L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS

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