H2N7002SN MOSFET Transistor

The H2N7002SN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H2N7002SN transistor as follows.

H2N7002SN Transistor Specification

Transistor Code		H2N7002SN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT323
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C

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