H04N60E MOSFET Transistor

The H04N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H04N60E transistor as follows.

H04N60E Transistor Specification

Transistor Code		H04N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		66pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS

UXPython is not the creator or an official representative of the H04N60E MOSFET transistor. You can download the official H04N60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRFZ34N MOSFET Transistor IRF9510 MOSFET Transistor 2SK3575 MOSFET Transistor 2SK513 MOSFET Transistor 2SK890 MOSFET Transistor AUIRF3305 MOSFET Transistor H7N0608AB MOSFET Transistor IRFZ24 MOSFET Transistor IRF634 MOSFET Transistor IRFB4310ZG MOSFET Transistor 2SJ78 MOSFET Transistor IRFB3806 MOSFET Transistor KHB9D5N20P MOSFET Transistor CS100N03_B8 MOSFET Transistor RFP2N18L MOSFET Transistor AUIRF4905 MOSFET Transistor CS7N80_A8 MOSFET Transistor HUF76423P3 MOSFET Transistor 2SK1503 MOSFET Transistor RFP15N06L MOSFET Transistor