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GD1 MOSFET Transistor

The GD1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the GD1 transistor as follows.

Circuit diagram symbol of the GD1 transistor

GD1 Transistor Specification

Transistor Code GD1
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code GD1
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 130pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

UXPython is not the creator or an official representative of the GD1 MOSFET transistor. You can download the official GD1 MOSFET transistor datasheet to get more infromation about this transistor.

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