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G7N65 MOSFET Transistor

The G7N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G7N65 transistor as follows.

Circuit diagram symbol of the G7N65 transistor

G7N65 Transistor Specification

Transistor Code G7N65
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 130W
Drain-Source Capacitance 98.1pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17.7nS

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